{"id":6068,"date":"2007-11-01T15:47:03","date_gmt":"2007-11-01T15:47:03","guid":{"rendered":"http:\/\/sacheminc.com\/?p=6068"},"modified":"2013-08-27T22:16:54","modified_gmt":"2013-08-27T22:16:54","slug":"sachem-expands-selectetch-product-line-with-selectetch-se-1130","status":"publish","type":"post","link":"https:\/\/www.sacheminc.com\/zh-hant\/sachem-expands-selectetch-product-line-with-selectetch-se-1130\/","title":{"rendered":"SACHEM EXPANDS SelectEtch\u2122 PRODUCT LINE WITH SelectEtch\u2122 SE-1130"},"content":{"rendered":"<p>Selective TEOS etchant offers shorter process times, enhanced selectivity and greater protection for polysilicon and gate oxide features.<\/p>\n<p><strong>(Austin, TX) November 1, 2007-<\/strong><strong>\u00a0<\/strong><a>SACHEM, Inc.<\/a>\u00a0announced today the introduction of\u00a0<a href=\"http:\/\/www.sacheminc.com\/industries\/integrated-circuits\/selectetch-selective-front-end-of-line-feol-oxide-etchants.html\">SelectEtch<sup>TM<\/sup>\u00a0SE-1130<\/a>, a new high performance selective etching and cleaning product for selective etching of TEOS-based oxides in advanced\u00a0<a href=\"http:\/\/www.sacheminc.com\/industries\/electronics\/integrated-circuits.html\">integrated circuits<\/a>. \u00a0SelectEtch<sup>TM<\/sup>\u00a0SE-1130&#8217;s pioneering technology incorporates specifically designed functional raw materials which provide low TEOS removal process times and enhanced protection for polysilicon and gate oxide features.\u00a0 SE-1130 etches TEOS with measurably improved selectivity to gate oxides and polysilicon gates relative to dilute hydrofluoric acid, (20:1 TEOS to Thermal Oxide selectivity versus dilute HF which range from 6-8:1 selectivity).<\/p>\n<p>SelectEtch<sup>TM<\/sup>\u00a0SE-1130 is a fluoride containing, aqueous etchant designed for removing TEOS-based oxides selectively to polysilicon and gate oxides. \u00a0SE-1130&#8217;s highly aqueous design plus its low fluoride concentration make it compatible with most standard materials of manufacture except quartz.<\/p>\n<p>The capability to rapidly etch TEOS hardmasks selectively to polysilicon gates and gate oxide can be utilized to create complex Silicon Germanium (SiGe) source-drain recess structures for the purpose of creating strain in pMOS devices.\u00a0 Selective removal of the hardmask after the dry recess etch step is critical to the protection of correctly dimensioned gates and gate oxides in advanced applications.<\/p>\n<p>Dr. Richard Goodin, Technology Vice President of SACHEM, Inc., commented, &#8220;SE-1130 Selective TEOS etchant allows device manufacturers to effectively remove Hardmask films from gate structures in the process of creating performance-enhancing strain in pMOS devices.\u00a0 Our expertise in chemistries with designed functionality has resulted in SE-1130, the latest product in a series of enabling products for device manufacturers.&#8221;<\/p>\n<p>SACHEM, Inc. delivers highly pure, precise and innovative chemical solutions designed to solve the most demanding and challenging applications.\u00a0 For over 50 years SACHEM has provided chemical solutions and services to customers in key markets including\u00a0\u00a0<a href=\"http:\/\/www.sacheminc.com\/industries\/electronics\/\">electronics<\/a>,\u00a0<a href=\"http:\/\/www.sacheminc.com\/industries\/biotechnology\/\">biotechnology<\/a>,\u00a0<a href=\"http:\/\/www.sacheminc.com\/industries\/carbohydrates\/\">starch modification<\/a>,\u00a0<a href=\"http:\/\/www.sacheminc.com\/industries\/polymers\/\">polymers<\/a>,\u00a0<a href=\"http:\/\/www.sacheminc.com\/industries\/catalysts\/\">catalysts<\/a>,\u00a0<a href=\"http:\/\/www.sacheminc.com\/industries\/pharmaceuticals\/\">pharmaceutical<\/a>\u00a0and\u00a0<a href=\"http:\/\/www.sacheminc.com\/industries\/agricultural-chemical\/\">agricultural chemicals<\/a>.\u00a0 Based in Austin, Texas, SACHEM&#8217;s expanding worldwide operations include manufacturing and research facilities in North America, Europe and Asia with a global service network and presence spanning over 30 countries.\u00a0 For more information about SACHEM, Inc. please view\u00a0<a>www.sacheminc.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Selective TEOS etchant offers shorter process times, en &hellip;<\/p>\n","protected":false},"author":43,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"wds_primary_category":0,"footnotes":""},"categories":[9,1],"tags":[],"class_list":["post-6068","post","type-post","status-publish","format-standard","hentry","category-news","category-uncategorized","no-thumb"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.sacheminc.com\/zh-hant\/wp-json\/wp\/v2\/posts\/6068","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sacheminc.com\/zh-hant\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.sacheminc.com\/zh-hant\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.sacheminc.com\/zh-hant\/wp-json\/wp\/v2\/users\/43"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sacheminc.com\/zh-hant\/wp-json\/wp\/v2\/comments?post=6068"}],"version-history":[{"count":0,"href":"https:\/\/www.sacheminc.com\/zh-hant\/wp-json\/wp\/v2\/posts\/6068\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.sacheminc.com\/zh-hant\/wp-json\/wp\/v2\/media?parent=6068"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.sacheminc.com\/zh-hant\/wp-json\/wp\/v2\/categories?post=6068"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.sacheminc.com\/zh-hant\/wp-json\/wp\/v2\/tags?post=6068"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}