NEWS
May 05, 2008
SACHEM Launches Displacement Chromatography Services
SACHEM responds to customer demand by offering onsite expertise to support scientists in evaluating and applying displacement chromatography.
May 01, 2008
SACHEM's Isolis System™ Highlighted at HPLC 2008
Technology breakthrough enables scientists to better analyze and prove product purity through greater sensitivity and precision in the identification of trace components.
March 26, 2008
SACHEM's Displacers Featured in American Biotechnology Laboratory Magazine
Expell™ displacers provide rapid protein purification with displacement chromatography.
March 19, 2008
SACHEM to Showcase New SelectEtch™ Products at SEMATECH's SPCC
Selective Silicon and Metal Etchants offer distinct advantages over standard chemistries in Front End of Line (FEOL) applications.
March 14, 2008
Dr. Craig Allen Joins SACHEM as Chief Technology Officer.
Dr. Allen to provide global leadership for all technology activities at SACHEM 
March 14, 2008
SACHEM To Exhibit and Present Technical Paper at SEMICON China 2008
SACHEM to highlight new production facility in China and feature SelectEtch™ product line at exhibit.
February 18, 2008
SACHEM To Present Technical Paper on Improved Silicon Etching for Sub-65nm Devices
New technology for planar-selective crystalline silicon etch delivers increased advantages.
January 25, 2008
SACHEM, Inc. Announces Joint Venture with Nagase & Co. Offering TMAH Recycle Technology
SACHEM's Mobius System™ is "green" technology designed to protect environment through minimization of chemical waste and water consumption while providing safe, readily available supply of high quality TMAH.
January 15, 2008
SACHEM To Exhibit at SEMICON Korea 2008 in Seoul, Korea

SACHEM announced today that it will exhibit at Semicon Korea 2008, Booth No. 1750.
January 08, 2008
SACHEM ExpandsSelectEtch™ Product Line with SelectEtch™ SE-1430

Planar-Selective Silicon Etchant allows device manufacturers to create more precise structures in crystalline silicon through enhanced silicon recess feature formation and improved surface roughness characteristics. 

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