SelectEtch™SELECTIVE FRONT END OF LINE (FEOL) SILICON ETCHANTS

SACHEM SelectEtch 1400™ series delivers

  • Selective Etching across crystal planes
  • Minimized surface roughness
  • Controllable etch rates

typical wet etch
alternative wet etch
pMOS Channel Strain Application
The combination of correctly defined recess structures and SiGe deposition in the source & drain areas can increase channel strain by as much as 100%.  Definition of the <1,1,1> facets facilitate the application of channel strain.  For every 1% increase in strain, a 10-20% improvement in ION can result.

SACHEM SelectEtch SE-1430™
SACHEM has developed a proprietary etchant with 
            Improved planar etch selectivity
            Decreased surface roughness
            Improved process control through lower, controllable etch rates
after dry etch

Note the distinct angles between the interfaces and the smooth bottom and sidewalls of the structures.

Available Products

SelectEtch™ SE-1430 Planar Selective Silicon Etchant

Planar Selective Etchant for Silicon to create source-drain recess geometries.

Product Sheet [102 KB]