SACHEM SelectEtch^™ SE-1200 Series has cleaner contacts with minimal critical dimension variation, higher or equivalent activity on thermal oxides vs. doped or low density oxides, and more precise control through lower overall etch rates.

SACHEM SelectEtch™ SE-1200 Series has

• Cleaner contacts with minimal critical dimension variation
• Higher or equivalent activity on thermal oxides vs. doped or low density oxides
• More precise control through lower overall etch rates

SelectEtch™ SE-1220 delivers consistent etch rates on a variety of oxides, removing the etch-generated oxide at the contact bottom without damage to Critical Dimensions (CD)

Application: Remove high aspect ratio contact etch residues without critical dimension variation or damage to exposed films
Critical Performance Measures:
Etch doped and undoped films uniformly
Etch TOx faster that TEOS 
Minimize etch on silicides or polysilicon
Remove thermally grown oxides efficiently
in single wafer tool processes