SACHEM SelectEtch™SE-1100 series is the key for

• Fast removal of thermal and doped oxides
• Consistent wet oxide etch rates with time to avoid over-etch
• Minimal attach on SiN and TiN films
• Good compatibility with polysilicon

Highly selective Oxide Etchants combine fast oxide etching with outstanding selectivity to SiN and TiN. Selectivity to nitrides is especially critical in removal of sacrificial oxides during the manufacture of cylindrical capacitors.

Example Etch Rates (Å/min)

Application: Oxide etchback for vertical metal capacitor formation
Critical Performance Measures: Requires etchant that is highly selective to SiN and TiN
 
Application: Oxide hardmask removal for bottle trench capacitor formation
Critical Performance Measures: Selective to thermal oxide, silicon nitride or other barrier layers plus minimal silicon damage